DocumentCode :
3295793
Title :
RF performance increase allowing IC timing adjustments by use of backside FIB processing
Author :
Schlangen, Rudolf ; Leihkauf, R. ; Lundquist, T. ; Egger, P. ; Boit, Christian
Author_Institution :
Berlin Univ. of Technol., Berlin, Germany
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
33
Lastpage :
36
Abstract :
Dealing with timing related soft fails has become predominant with recent technologies and is expected more so future. A backside FIB edit procedure allowed trimming of internal timing conditions, with demonstrated FIB-induced speed enhancement > 20%. This proposed technique seems applicable to any on chip circuitry, expanding rapid prototyping options.
Keywords :
focused ion beam technology; integrated circuit technology; IC timing adjustment; RF performance; backside FIB edit procedure; backside FIB processing; chip circuitry; focused ion beam; integrated circuit; rapid prototyping option; Crystallization; Degradation; Diodes; FETs; Inverters; Physics; Radio frequency; Radiofrequency integrated circuits; Thermal management; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232703
Filename :
5232703
Link To Document :
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