DocumentCode :
3295796
Title :
Emission characteristic of diamond-tip FEA fabricated by transfer mold technique
Author :
Kim, Seong-Jin ; Ju, Byeong Kwon ; Lee, Yun Hi ; Park, Beom Soo ; Baik, Young-Joon ; Lim, Sungkyoo ; Oh, Myung Hwan
Author_Institution :
Div. of Electron. & Inf. Sci., Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
526
Lastpage :
529
Abstract :
Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 A. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed
Keywords :
current density; diamond; electron field emission; vacuum microelectronics; 1E-6 to 1E-4 torr; 300 angstrom; C; current density; current-voltage measurement; emission characteristic; emission current; field emitter arrays; pressure condition; tip radius; transfer mold technique; Current density; Current measurement; Etching; Fabrication; Field emitter arrays; Pressure measurement; Semiconductor films; Shape; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601879
Filename :
601879
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3295796
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