Emission characteristic of diamond-tip FEA fabricated by transfer mold technique

Author

Kim, Seong-Jin ; Ju, Byeong Kwon ; Lee, Yun Hi ; Park, Beom Soo ; Baik, Young-Joon ; Lim, Sungkyoo ; Oh, Myung Hwan

Author_Institution

Div. of Electron. & Inf. Sci., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

526

Lastpage

529

Abstract

Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 A. The current density of 800 μA/cm² was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10^-4, 1×10^-5, 1×10^-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed

Keywords

current density; diamond; electron field emission; vacuum microelectronics; 1E-6 to 1E-4 torr; 300 angstrom; C; current density; current-voltage measurement; emission characteristic; emission current; field emitter arrays; pressure condition; tip radius; transfer mold technique; Current density; Current measurement; Etching; Fabrication; Field emitter arrays; Pressure measurement; Semiconductor films; Shape; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601879

Filename

601879