DocumentCode
3295838
Title
Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction
Author
Wang, Q.X. ; Zhu, J. ; Du, A.Y. ; Liu, J.P. ; Hua, Y.N.
Author_Institution
King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
3
Abstract
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
Keywords
CMOS integrated circuits; MOSFET; diffraction; failure analysis; nanoelectronics; PMOS transistor; advanced CMOS technology; channel strain; dramatic strain loss; local strain distribution analysis; nanobeam diffraction; quantitative strain analysis; wafer process; CMOS technology; Capacitive sensors; Charge coupled devices; Diffraction; Electron beams; Holography; MOSFETs; Silicon; Spatial resolution; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5531984
Filename
5531984
Link To Document