Title :
Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction
Author :
Wang, Q.X. ; Zhu, J. ; Du, A.Y. ; Liu, J.P. ; Hua, Y.N.
Author_Institution :
King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Abstract :
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
Keywords :
CMOS integrated circuits; MOSFET; diffraction; failure analysis; nanoelectronics; PMOS transistor; advanced CMOS technology; channel strain; dramatic strain loss; local strain distribution analysis; nanobeam diffraction; quantitative strain analysis; wafer process; CMOS technology; Capacitive sensors; Charge coupled devices; Diffraction; Electron beams; Holography; MOSFETs; Silicon; Spatial resolution; Strain measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5531984
