Title :
Determination of the local electric field strength near electric breakdown
Author :
Geinzer, T. ; Heiderhoff, R. ; Phang, J.C.H. ; Balk, L.J.
Author_Institution :
Dept. of Electron., Univ. of Wuppertal, Wuppertal, Germany
Abstract :
For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail.
Keywords :
OBIC; electric field measurement; semiconductor device breakdown; semiconductor device reliability; complementary optical beam induced current; electric breakdown; energy-dispersive photon emission microscopy; local electric field strength; semiconductor device; Electric breakdown; Failure analysis; Integrated circuit reliability; Integrated optics; Optical beams; Optical filters; Optical microscopy; Optical scattering; Semiconductor devices; Stimulated emission;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5531989
