DocumentCode :
3295940
Title :
Electrical characterization of contact level PVC (Passive Voltage Contrast) test using a nanoprober
Author :
Han, Sang-Cheol ; Cho, Seong-Jun ; Choi, Jeong-Un ; Han, Jeong-Uk ; Hah, Sang-Rok
Author_Institution :
Process Integration Group, Samsung Electron. Co., Ltd., Yongin, South Korea
fYear :
2010
fDate :
5-9 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
PVC (Passive Voltage Contrast) fault isolation method by using a SEM (Scanning Electron Microscope) has been widely used for isolating the defective mc (metal contact) in the CMOS logic SRAM bit cell array. The low power (LP) processed sram cells are easy to charging under PVC test and it helps isolating defective contacts in the cell. However, some device such as a high speed (HS) sram cell is hard to charging in PVC test by unknown reason. It makes difficulties for isolating defective contacts in the sram cell array. In this paper, our group analyzed the electrical current of each contact in sram cell using a nanoprobing technique and correlated it with PVC charged contact images, respectively. Also, the difference of PVC charging status between LP and HS SRAM are characterized electrically by using a nanoprober. The nanoprobing result indicates that a slight increasing a leakage current of about 10pA can abruptly change the charging brightness from dark to grey. Finally, we can found some clues for making grey contacts of HS SRAM using not only a nanoprobing but also a HRTEM (High Resolution Transmission Electron Microscope) image.
Keywords :
CMOS logic circuits; CMOS memory circuits; electrical contacts; integrated circuit testing; leakage currents; low-power electronics; CMOS logic SRAM bit cell array; PVC charged contact images; PVC fault isolation; contact level PVC test; defective metal contact; electrical characterization; electrical current; high resolution transmission electron microscope image; leakage current; low power processed SRAM cells; nanoprober; passive voltage contrast; scanning electron microscope; CMOS logic circuits; Contacts; Image analysis; Log periodic antennas; Logic arrays; Logic devices; Random access memory; Scanning electron microscopy; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4244-5596-6
Type :
conf
DOI :
10.1109/IPFA.2010.5531990
Filename :
5531990
Link To Document :
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