Optimization of optical and electrical behaviour of quantum well based GaN-InGaN blue LED

The performance of GaN/InGaN quantum well was simulated using ATLAS software (Silvaco International Inc.) In this work, we simulated a quantum well active region of InGaN with GaN barrier layers. Here, we studied the changes in luminous intensity by varying thickness of the well region and Indium mole fraction of InGaN quantum well. It is found that the luminous intensity decreased when the thickness of the active layer was increased. It is also observed that luminous intensity increased with increasing Indium mole fraction up to 10% but decreased after this. An optimum result was observed at mole fraction constant of 0.175 for 2 nm well width and 6 nm barrier width.