Characterization of CVD diamond film and diamond-tip field emitter array for FED applications

Author

Ju, Byeong Kwon ; Kim, Seong-Jin ; Lee, Yun Hi ; Park, Beom Soo ; Baik, Young-Joon ; Lim, Sungkyoo ; Oh, Myung Hwan

Author_Institution

Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

530

Lastpage

533

Abstract

Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 A was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films

Keywords

CVD coatings; Raman spectroscopy; diamond; display devices; etching; vacuum microelectronics; 200 muA; 300 angstrom; 6 muA; 600 V; 800 V; C; CVD; FED applications; Raman spectroscopy; current-voltage measurement; emission current; field emitter array; orientation dependent etching; threshold voltage; tip radius; Current measurement; Electrons; Etching; Field emitter arrays; Low voltage; Raman scattering; Silicon; Spectroscopy; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601880

Filename

601880