Title :
Stochastic modeling of the resistive switching mechanism in oxide-based memory
Author :
Makarov, A. ; Sverdlov, V. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
We have investigated a stochastic model of the resistive switching mechanism in resistive random access memory (RRAM) based on electron hopping. The distribution of electron occupation probabilities analyzed with our approach is in good agreement with previous work. In particular, a low occupation region is formed near the cathode for bipolar behavior or near the anode for unipolar behavior. Our simulation of the temperature dependence of the electron occupation probability near the anode and the cathode shows an amazing stability of the low occupation region. This result indicates high robustness of failure-free RRAM switching from a state with low resistance to a state with high resistance for elevated temperature.
Keywords :
probability; random-access storage; stochastic processes; RRAM; electron hopping; electron occupation probability; oxide-based memory; resistive random access memory; resistive switching; stochastic modeling; Anodes; Cathodes; Electrons; Ferroelectric films; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Scalability; Stochastic processes;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5531994
