Title :
Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si
Author :
Majhi, Banshidhar ; Mahata, C. ; Bera, M.K. ; Hota, M.K. ; Mallik, S. ; Das, Teerath ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
Abstract :
Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.
Keywords :
MIS devices; aluminium; capacitors; elemental semiconductors; paramagnetic resonance; photoemission; silicon; silicon compounds; tantalum compounds; yttrium compounds; Al-TaYOx; MIS capacitors; Si-Si0.8Ge0.2; charge trapping; charge trapping kinetics; chemical nature; electron paramagnetic resonance; gate dielectrics; internal photoemission; magnetic resonance; paramagnetic defects; reliability characteristics; Capacitors; Carbon capture and storage; Chemicals; Dielectrics; Electrons; Kinetic theory; Magnetic resonance; Paramagnetic materials; Paramagnetic resonance; Photoelectricity;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232718
