• DocumentCode
    3296119
  • Title

    Characterization of oxide traps by RTN measurement in MOSFETs and memory devices

  • Author

    Shin, Hyungcheol ; Oh, Byoungchan

  • Author_Institution
    Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Kwanak-gu, South Korea
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (xT, yT) and energy level (ECox - ET) of oxide traps.
  • Keywords
    MOSFET; dielectric devices; electric potential; semiconductor device measurement; telegraphy; MOSFET; RTN measurement; high-k FET; memory devices; nano-wire; oxide traps; poly depletion voltage drop; random telegraph noise; recessed-channel; surface potential; Electric variables measurement; Energy states; Equations; MOSFETs; Nanoscale devices; Noise measurement; Semiconductor device noise; Telegraphy; Threshold voltage; Voltage fluctuations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-5596-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2010.5531998
  • Filename
    5531998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3296119