Title :
Hot carrier stress induced negative differential resistance in the output characteristic of poly-Si TFTs
Author :
Hu, Chunfeng ; Wang, Mingxiang ; Xu, Meijuan
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
Hot carrier (HC) stress induced negative differential resistance (NDR) behavior in the reserve mode output characteristics of n-type poly-Si TFTs is first observed. The NDR phenomenon, i.e., ION decreases with increasing VD is also found to increase at higher VG but disappear when VG<;VTH and is reduced as stress time increases. Based on drain induced grain barrier lowering and thermionic emission controlled carrier conduction relating to the HC induced trap potential barrier, the NDR phenomenon can be understood.
Keywords :
elemental semiconductors; hot carriers; silicon; thermionic emission; thin film transistors; Si; carrier conduction; drain induced grain barrier; hot carrier stress induced negative differential resistance; n-type poly-Si TFT; reserve mode output characteristics; thermionic emission; Application specific integrated circuits; Degradation; Electrodes; Hot carriers; Laboratories; Microelectronics; Temperature; Testing; Thermal stresses; Thermionic emission;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532000
