Title :
Reliability behavior of TaAlOx Metal-Insulator-Metal capacitors
Author :
Hota, M.K. ; Mahata, C. ; Bera, M.K. ; Mallik, S. ; Majhi, B. ; Das, T. ; Sarkar, C.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
Abstract :
Reliability characteristics of TaAlOx high-k dielectric MIM capacitors are reported. TaAlOx films have been deposited by RF co-sputtering of Ta2O5 and Al2O3 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlOx-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of ~ 4.2 - 5.4 MV/cm was found for TaAlOx films.
Keywords :
MIM devices; aluminium compounds; electric breakdown; high-k dielectric thin films; tantalum compounds; thin film capacitors; TaAlOx; current 20 nA to 60 nA; dielectric breakdown voltage; high-k dielectric MIM capacitors; metal-insulator-metal capacitors; reliability behavior; voltage 3 V to 7 V; voltage coefficients of capacitance; Breakdown voltage; Capacitance; Carbon capture and storage; Degradation; Dielectric substrates; High-K gate dielectrics; Kinetic theory; MIM capacitors; Radio frequency; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232720
