In-suit observations of mechanical stress in Al interconnect line under thermal/electrical conditions

Author

Li Zhiguo ; Wu Yuehua ; Fu Houkui ; Guo Chunsheng ; Ji Yuan ; Liu Zhimin

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2009

fDate

6-10 July 2009

Firstpage

794

Lastpage

797

Abstract

In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3times105A/cm2 to 4times106A/cm2. The conclusion agreed well with the simulation results.

Keywords

X-ray diffraction; aluminium; current density; electromigration; integrated circuit interconnections; Al; current density; electromigration; interconnect line; mechanical stress; self-heating structure; synchrotron radiation x-ray diffraction; thermal effect; thermal-electrical conditions; Aluminum; Artificial intelligence; Current density; Residual stresses; Synchrotron radiation; Temperature control; Testing; Thermal stresses; Welding; X-ray diffraction; Al interconnect; FEM; electro-migration; synchrotron radiation; thermal stress; x-ray;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232722

Filename

5232722