A new FA method used for OTP disturbance failure

Author

Changqing, Chen ; Boon, Ang Ghim ; Teo, Angela ; Ping, Neo Soh ; Qingxiao, Wang

Author_Institution

Global Foundries, Singapore, Singapore

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, a new FA method was proposed and successfully used in the OTP (one time programmable) memory disturbance failure. The traditional FA method PVC (positive voltage contrast) is employed to detect the failed location, but it failed to find it. The more sensitive method, AFP biased current image was also failed to locate the failed location. The new method uses the light to stimulus the sample, and use AFP to scan and measure the induced current. The abnormal contrast was observed. The EFA was performed to probe the failed location to breakdown. The result show the breakdown voltage is lower than good unit. Further PFA was performed to find the Silicon-related defects, which also confirm the success of this method.

Keywords

MOS memory circuits; PROM; failure analysis; integrated circuit reliability; AFP biased current image; OTP disturbance failure; PVC; Si-related defects; abnormal contrast; breakdown voltage; light-induced current; one time programmable memory disturbance failure; positive voltage contrast; Current measurement; Electric breakdown; Electrons; Failure analysis; Foundries; Nonvolatile memory; Page description languages; Probes; Voltage; Wood industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5532005

Filename

5532005