Statistical modeling of silicon dioxide reliability

Author

Lee, Jack ; Chen, Ih-Chin ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1988

fDate

12-14 Apr 1988

Firstpage

131

Lastpage

138

Abstract

A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modelled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness, process improvements including defect gettering, and alternative dielectrics such as CVD oxides are evaluated in terms of defect density as a function of effective oxide thinning

Keywords

electric breakdown of solids; integrated circuit technology; oxidation; reliability; silicon compounds; statistical analysis; CVD oxides; MOS ICs; SiO₂ reliability; defect density model; defect gettering; effective oxide thinning; failure rate; intrinsic breakdown; lifetime prediction; oxide thickness; screen time; screen yield; statistical modelling; yield; Dielectrics; Electric breakdown; Extrapolation; Gettering; Integrated circuit reliability; Integrated circuit yield; Predictive models; Silicon compounds; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1988. 26th Annual Proceedings., International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/RELPHY.1988.23440

Filename

23440