DocumentCode
3296315
Title
Degradation of RF and noise characteristics of InP/InGaAs double heterojunction bipolar transistors under high reverse base-collector voltage
Author
Wang, H. ; Ng, C.W.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2009
fDate
6-10 July 2009
Firstpage
756
Lastpage
758
Abstract
The effect of hot carrier induced degradation on RF performance of InP/InGaAs double heterojunction bipolar transistors (DHBTs) is explored. Degradation of RF performance is more significant than that of DC performance. We found that the increase in base extrinsic resistance could be the root cause. A new degradation mechanism is proposed.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; phosphorus compounds; semiconductor device noise; double heterojunction bipolar transistor; extrinsic resistance; hot carrier induced degradation; noise characteristics degradation; reverse base-collector voltage; Degradation; Double heterojunction bipolar transistors; Frequency measurement; Hot carriers; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Radio frequency; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232730
Filename
5232730
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