Title :
Degradation of RF and noise characteristics of InP/InGaAs double heterojunction bipolar transistors under high reverse base-collector voltage
Author :
Wang, H. ; Ng, C.W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The effect of hot carrier induced degradation on RF performance of InP/InGaAs double heterojunction bipolar transistors (DHBTs) is explored. Degradation of RF performance is more significant than that of DC performance. We found that the increase in base extrinsic resistance could be the root cause. A new degradation mechanism is proposed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; phosphorus compounds; semiconductor device noise; double heterojunction bipolar transistor; extrinsic resistance; hot carrier induced degradation; noise characteristics degradation; reverse base-collector voltage; Degradation; Double heterojunction bipolar transistors; Frequency measurement; Hot carriers; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Radio frequency; Stress; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232730
