Title :
The characteristics of silicon field emission triode
Author :
Chen, Pan-Ao ; Chen, Qun-Xia ; Huang, Zhong-Ping
Author_Institution :
Lab. of Electron. Devices, Nanjing Electron. Devices Inst., China
Abstract :
The silicon field emission triode is fabricated successfully in 3 inch silicon chips by using wet etching and dry-wet-dry alternate oxidation sharpening at 1000 °C. The array of tips is up to 50× 50, and the radii of tips are about 20 nm. The result shows that the anode current may reach 185 μ A when the grid voltage is 120 V, and the anode voltage is 800 V. The grid current is too weak to be measured because of the limitation of the resolution of measuring instrument. The influence of the height of the grid to anode current is also studied in experiment and in theory
Keywords :
anodes; electron field emission; elemental semiconductors; etching; oxidation; silicon; triodes; vacuum microelectronics; 1000 degC; 120 V; 185 muA; 20 nm; 3 in; 800 V; Si; anode current; anode voltage; dry-wet-dry alternate oxidation sharpening; field emission triode; grid current; grid to anode current; grid voltage; measuring instrument resolution; tip array; wet etching; Anodes; Cathodes; Current measurement; Fabrication; Hafnium; Oxidation; Silicon; Space technology; Voltage; Wet etching;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601882
