Title :
The effect of microstructure on the electromigration lifetime distribution
Author :
de Orio, R.L. ; Ceric, H. ; Cervenka, J. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
In this work we analyze the influence of the statistical distribution of copper grain sizes on the electromigration time to failure distribution based on numerical simulations. We have applied a continuum multi-physics electromigration model which incorporates the effects of grain boundaries for stress build-up. It is shown that the lognormal distribution of grain sizes causes a lognormal distribution for the times to failure. Moreover, the increase of the standard deviation of the grain size distribution results in an increase of the electromigration lifetimes standard deviation.
Keywords :
electromigration; grain boundaries; grain size; log normal distribution; continuum multiphysics electromigration model; electromigration lifetime distribution; electromigration lifetime standard deviation; grain boundary; grain size distribution; lognormal distribution; microstructure; statistical distribution; stress build-up; Copper; Electromigration; Failure analysis; Grain boundaries; Grain size; Integrated circuit interconnections; Microstructure; Numerical simulation; Statistical distributions; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232733
