Title :
Depth-resolved photoemission microscopy for localization of leakage currents in through Silicon Vias (TSVs)
Author :
Cassidy, Cathal ; Renz, F. ; Kraft, J. ; Schrank, F.
Author_Institution :
austriamicrosystems AG, Graz, Austria
Abstract :
Depth-resolved IR photoemission microscopy was applied for localization of defects causing leakage currents within Through Si Vias (TSVs). Specifically, analyses of the changes in intensity and spatial distribution of the detected emission, as a function of the focal plane position, allow quantification of the depth of defects within the TSV. Physical failure analysis verified the presence of the defects at the coordinates specified by emission microscopy, and allowed defect failure mechanisms to be identified.
Keywords :
failure analysis; focal planes; leakage currents; photoelectron microscopy; depth-resolved photoemission microscopy; focal plane position; leakage currents; physical failure analysis; Copper; Electromigration; Grain boundaries; Grain size; Integrated circuit interconnections; Leakage current; Microscopy; Photoelectricity; Silicon; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232734
