Title : 
Effect of metal line geometry on electromigration lifetime in Al-Cu submicron interconnects
         
        
        
            Author_Institution : 
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
         
        
        
        
        
        
            Abstract : 
The dependence of electromigration lifetime on the metal line geometry in Al-Cu submicron lines was investigated. Results indicated that as the linewidth decreases, the lifetime initially decreases and then increases below a crucial width. The lifetime also decreases with increasing film thickness. Those Al-Cu submicron lines with line width comparable to or smaller than film thickness have longer electromigration lifetime than other Al-Cu fine lines. The effect of line length on electromigration lifetime was found to be small
         
        
            Keywords : 
aluminium alloys; copper alloys; electromigration; metallisation; reliability; AlCu submicron interconnects; electromigration lifetime; film thickness; linewidth; metal line geometry; Conducting materials; Conductive films; Current density; Electric resistance; Electromigration; Geometry; Temperature; Thin film devices; Transistors; Very large scale integration;
         
        
        
        
            Conference_Titel : 
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
         
        
            Conference_Location : 
Monterey, CA
         
        
        
            DOI : 
10.1109/RELPHY.1988.23448