Experimental Semiconductor Nanoelectronics in Institute of Semiconductor Physics SB RAS

Author

Neizvestny, Igor G.

Author_Institution

Siberian Branch of Russian Acad. of Sci., Novosibirsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

16

Lastpage

18

Abstract

This paper deals with the technologies in Institute of Semiconductor Physics SB RAS which are the preparation of initial nanometer size thickness structures (substrates ) by molecular beam epitaxy method (MBE) and silicon on insulator (SOI) method, the methods forming of nanometer size lateral structures by electron beam lithography and atomic force microscopy, and the methods forming three dimensions nanostructures (nanotubes) by self-scrolling highly strained heterolayers.

Keywords

atomic force microscopy; electron beam lithography; molecular beam epitaxial growth; nanoelectronics; semiconductor technology; silicon-on-insulator; Institute of Semiconductor Physics SB RAS; MBE method; SOI method; atomic force microscopy; electron beam lithography; molecular beam epitaxy method; nanometer size lateral structures; self-scrolling highly strained heterolayers; semiconductor nanoelectronics; silicon on insulator method; Atomic beams; Atomic force microscopy; Electron beams; Lithography; Molecular beam epitaxial growth; Nanoelectronics; Nanostructures; Physics; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292975

Filename

4292975