A novel methodology to analyze time-dependent dielectric breakdown failure mechanism of copper/low-k interconnects

Author

Tong, Y. ; Lim, Y.K. ; Chen, C.Q. ; Zhang, W.Y. ; Tan, J.B. ; Sohn, D.K. ; Hsia, L.C.

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore, Singapore

fYear

2009

fDate

6-10 July 2009

Firstpage

719

Lastpage

722

Abstract

A novel industry methodology has been developed to analyze TDDB reliability failure on Cu/low-k SiCOH interconnects. Initial breakdown point is at interface between capping layer and metal line. Inline process control needs to be tightened to improve end of line profile and electric field variation.

Keywords

copper; electric breakdown; failure analysis; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; Cu; TDDB reliability failure analysis; capping layer; electric field variation; industry methodology; inline process control; low-k interconnection; metal line; time-dependent dielectric breakdown failure mechanism; Breakdown voltage; Copper; Dielectric breakdown; Electric breakdown; Failure analysis; Manufacturing industries; Performance analysis; Scanning electron microscopy; Testing; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232738

Filename

5232738