Title :
A novel methodology to analyze time-dependent dielectric breakdown failure mechanism of copper/low-k interconnects
Author :
Tong, Y. ; Lim, Y.K. ; Chen, C.Q. ; Zhang, W.Y. ; Tan, J.B. ; Sohn, D.K. ; Hsia, L.C.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore, Singapore
Abstract :
A novel industry methodology has been developed to analyze TDDB reliability failure on Cu/low-k SiCOH interconnects. Initial breakdown point is at interface between capping layer and metal line. Inline process control needs to be tightened to improve end of line profile and electric field variation.
Keywords :
copper; electric breakdown; failure analysis; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; Cu; TDDB reliability failure analysis; capping layer; electric field variation; industry methodology; inline process control; low-k interconnection; metal line; time-dependent dielectric breakdown failure mechanism; Breakdown voltage; Copper; Dielectric breakdown; Electric breakdown; Failure analysis; Manufacturing industries; Performance analysis; Scanning electron microscopy; Testing; Transmission electron microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232738
