High reliable Al-Si alloy/Si contacts by rapid thermal sintering

Author

Umemura, Eiichi ; Onoda, Hiroshi ; Madokoro, Shoji

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1988

fDate

12-14 Apr 1988

Firstpage

230

Lastpage

233

Abstract

Rapid thermal annealing technology has been applied to the sintering process for Al-Si alloy. Contact resistance was kept low by this technique, and low contact resistance was maintained even after postsintering heat treatment. The relationship between contact resistance and the number of Si nodules has been investigated. Si nodules and the Si at contact holes are considered to be precipitation nuclei for dissolved Si in Al-Si alloy. Precipitating Si is shared by Si nodules and contact holes after heat treatment. This model explains contact resistance change during heat treatments

Keywords

aluminium alloys; contact resistance; incoherent light annealing; metallisation; reliability; silicon; silicon alloys; sintering; AlSi-Si; Si nodules; contact holes; contact resistance; high reliability; metallisation; postsintering heat treatment; precipitation nuclei; rapid thermal annealing; rapid thermal sintering; Contact resistance; Furnaces; Heat treatment; Inorganic materials; Maintenance; Metallization; Rapid thermal annealing; Rapid thermal processing; Resistance heating; Silicon alloys; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1988. 26th Annual Proceedings., International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/RELPHY.1988.23455

Filename

23455