Title :
Properties of Composite Films Obtained by Ion-Plasma Atomizing
Author :
Danilina, T.I. ; Sakharov, J.V.
Author_Institution :
Tomsk State Univ., Tomsk
Abstract :
In this work thin films of titanium silicide and molybdenum as materials for contacts on different substrates and for Schottky barriers in gallium arsenide have been investigated. Material of constant should be of low specific resistance and high thermostability at all following technological operations. Suitability of silicide films for devices with Schottky barrier has been evaluated by values of inverse voltage and coefficient of identity. Composition of the obtained films has been studied by the method of Reserford back scattering (RBS) and by the method of Auger spectroscopy.
Keywords :
Auger electron spectra; III-V semiconductors; Schottky barriers; electrical resistivity; gallium arsenide; molybdenum; plasma arc spraying; semiconductor-metal boundaries; silicon alloys; titanium alloys; Auger spectroscopy; GaAs; Mo-GaAs; Reserford back scattering; Schottky barriers; TiSi2-GaAs; composite films; gallium arsenide; ion-plasma atomization; molybdenum; specific resistance; thermostability; titanium silicide; Annealing; Conducting materials; Electric shock; Nanostructured materials; Powders; Region 8; Silicides; Silicon; Substrates; Titanium;
Conference_Titel :
Modern Technique and Technologies, 2005. MTT 2005. 11th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists
Conference_Location :
Tomsk
Print_ISBN :
978-0-7803-8877-2
Electronic_ISBN :
978-0-7803-8878-9
DOI :
10.1109/SPCMTT.2005.4493225
