Design of a 1 V low power CMOS bandgap reference based on resistive subdivision

Author

Lasanen, K. ; Korkala, V. ; Räisänen-Ruotsalainen, E. ; Kostamovaara, J.

Author_Institution

Dept. of Electr. Eng. & Infotech, Oulu Univ., Finland

Volume

3

fYear

2002

fDate

4-7 Aug. 2002

Abstract

The design of a CMOS bandgap reference (BGR), for portable applications with medium accuracy, is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 0.750 V with 1σ variation of 10 mV (1.3%) without trimming with a supply voltage range from 1 V to 1.6 V and temperature range of -20°C-50°C measured from 10 samples. The maximum supply current is 4.5 μA and the area of the design is ∼0.13 mm² with a standard 0.35 μm double-poly n-well CMOS process.

Keywords

CMOS analogue integrated circuits; integrated circuit design; integrated circuit measurement; low-power electronics; resistors; voltage regulators; -20 to 50 degC; 0.35 micron; 0.750 V; 1 V; 1 to 1.6 V; 4.5 muA; CMOS voltage reference; double-poly n-well CMOS process; low power bandgap reference; low power consumption; maximum supply current; medium accuracy BGR; n-well resistors; portable electronics; resistive subdivision; supply voltage range; temperature range; Circuit topology; Current supplies; Diodes; Electric variables measurement; Energy consumption; Low voltage; Photonic band gap; Resistors; Semiconductor device measurement; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on

Print_ISBN

0-7803-7523-8

Type

conf

DOI

10.1109/MWSCAS.2002.1187099

Filename

1187099