Title :
Investigation of high-power device and process for field emission display
Author :
Yeh, Ching-Fa ; Liu, Jin-Su ; Huang, Ching-Ming
Author_Institution :
Dept of Electron. Eng., Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A method of fabricating a semiconductor device including a high withstanding voltage lateral CMOS and standard logic CMOS is developed for field emission display. Structure, process and simulation by TSUPREM and MEDICI is discussed in this paper
Keywords :
CMOS integrated circuits; circuit analysis computing; digital simulation; driver circuits; flat panel displays; integrated circuit design; vacuum microelectronics; MEDICI; TSUPREM; field emission display; high-power device; lateral CMOS; simulation; standard logic CMOS; withstanding voltage; Avalanche breakdown; Breakdown voltage; CMOS logic circuits; CMOS process; Dielectric breakdown; Flat panel displays; Industrial electronics; Logic devices; MOS devices; Medical simulation;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601901
