Current bunching in static field and novel input stage for microwave devices based on spindt type cathodes

Author

Galdetskiy, A.V.

Author_Institution

SRI Istok, Fryazino, Russia

fYear

1996

fDate

7-12 Jul 1996

Firstpage

640

Lastpage

644

Abstract

Analytical one-dimensional theory is developed, describing field emission modulation and electron bunching in static and small RF fields. It takes exactly in account the influence of the static field and space charge and is valid for various current sources, providing unidirectional electron motion. On this base a new type of input stage for klystrode-type devices is considered which consists of an FEA triode with finite transit angle. The effective gain of this modulator is an order of magnitude greater than the gain of a conventional modulator

Keywords

cathodes; electron field emission; microwave tubes; modulation; space charge; triodes; vacuum microelectronics; FEA triode; RF fields; current bunching; electron bunching; field emission modulation; finite transit angle; input stage; klystrode-type devices; microwave devices; modulator; one-dimensional theory; space charge; spindt type cathodes; static field; Cathodes; Conductivity; Diodes; Electrodes; Electromagnetic heating; Electron emission; Microelectronics; Microwave devices; Microwave theory and techniques; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601905

Filename

601905