DocumentCode :
3296996
Title :
Current bunching in static field and novel input stage for microwave devices based on spindt type cathodes
Author :
Galdetskiy, A.V.
Author_Institution :
SRI Istok, Fryazino, Russia
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
640
Lastpage :
644
Abstract :
Analytical one-dimensional theory is developed, describing field emission modulation and electron bunching in static and small RF fields. It takes exactly in account the influence of the static field and space charge and is valid for various current sources, providing unidirectional electron motion. On this base a new type of input stage for klystrode-type devices is considered which consists of an FEA triode with finite transit angle. The effective gain of this modulator is an order of magnitude greater than the gain of a conventional modulator
Keywords :
cathodes; electron field emission; microwave tubes; modulation; space charge; triodes; vacuum microelectronics; FEA triode; RF fields; current bunching; electron bunching; field emission modulation; finite transit angle; input stage; klystrode-type devices; microwave devices; modulator; one-dimensional theory; space charge; spindt type cathodes; static field; Cathodes; Conductivity; Diodes; Electrodes; Electromagnetic heating; Electron emission; Microelectronics; Microwave devices; Microwave theory and techniques; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601905
Filename :
601905
Link To Document :
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