Title :
An investigation of timing jitter in bipolar ECL ring oscillators
Author :
Wang, Y. ; Zhang, C.W. ; Forbes, L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
Timing jitter is a concern in high speed digital circuits, the presence of timing jitter will degrade the system performance in many high speed applications, it is a critical design consideration in nearly every type of digital systems. In this paper, we have investigated the timing jitter in silicon BJT/or SiGe HBT ECL ring oscillators, and we have shown BJT/or SiGe HBT oscillators have lower jitter compared to their CMOS counterparts. As such silicon BJT and/or SiGe HBT ring oscillators are a potential choice for low jitter applications.
Keywords :
Ge-Si alloys; bipolar digital integrated circuits; emitter-coupled logic; high-speed integrated circuits; oscillators; silicon; timing jitter; Si; Si BIT ECL ring oscillators; SiGe; SiGe HBT ECL ring oscillators; high speed digital circuits; low jitter applications; timing jitter; 1f noise; Digital circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Ring oscillators; Silicon germanium; Timing jitter; White noise;
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
DOI :
10.1109/MWSCAS.2002.1187115