Title :
Thermal characteristics of an advanced bMPI-based 1T-DRAM cell
Author :
Chen, Cheng-Hsin ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chiu, Hsien-Nan ; Chang, Tzu-Feng ; Fan, Yi-Hsuan ; Chang, Yu-Che ; Lu, Kuan-Yu ; Tai, Chih-Hsuan
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ. (NSYSU EE), Kaohsiung, Taiwan
Abstract :
In this paper, we study the thermal characteristics of the bMPI-based 1T-DRAM cell. For a bMPI-FET, it can not only improve the thermal stability about 38% compared with the bPDSOI-FET due to the S/D-tied scheme, but also maintain the desired short-channel characteristics due to the block oxide structure.
Keywords :
DRAM chips; failure analysis; thermal insulation; thermal stability; S/D-tied scheme; advanced bMPI-based 1T-DRAM cell; bPDSOI-FET; block oxide structure; middle partial insulation; short-channel characteristics; thermal characteristics; thermal stability; Capacitance; Capacitors; Etching; Lattices; MOSFET circuits; Manufacturing processes; Random access memory; Temperature; Thermal engineering; Thermal stability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532078
