High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits

Author

Quéré, Yves ; Le Gouguec, Thierry ; Tanguy, Noël ; Martin, Pierre-Marie ; Le Berre, Daniel ; Huret, Fabrice

Author_Institution

LEST-UMR CNRS

fYear

2006

fDate

9-12 May 2006

Firstpage

253

Lastpage

256

Abstract

This communication deals with frequency behavior of orthogonal interconnect layers on inductance in high-speed VLSI circuits. The RLC parameters of the distributed model are determined by electromagnetic simulations. We evidence the error made on inductance in the range 1-50 GHz for three traditional interconnect configurations. A time-domain analysis highlights the impact of the inductance error on digital signals propagation. This analysis uses a numerical tool to take into account the frequency dependence of RLC parameters

Keywords

CMOS integrated circuits; MMIC; RLC circuits; UHF integrated circuits; VLSI; integrated circuit interconnections; time-domain analysis; 1 to 50 GHz; CMOS technology; RLC parameters; digital signals propagation; distributed model; electromagnetic simulations; high-speed VLSI circuits; inductance error; orthogonal interconnect layers; time-domain analysis; CMOS technology; Capacitance; Circuit simulation; Copper; Crosstalk; Frequency dependence; Inductance; Integrated circuit interconnections; RLC circuits; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation on Interconnects, 2006. IEEE Workshop on

Conference_Location

Berlin, Germany

Print_ISBN

1-4244-0455-x

Electronic_ISBN

1-4244-0455-x

Type

conf

DOI

10.1109/SPI.2006.289237

Filename

4069472