An NMOS inductive loading technique for extended operating frequency CMOS ring oscillators

Author

Worapishet, A. ; Thamsirianunt, M.

Author_Institution

Mahanakom Microelectron. Res. Centre, Mahanakorn Univ. of Technol., Thailand

Volume

1

fYear

2002

fDate

4-7 Aug. 2002

Abstract

The circuit architecture of the active inductive load based upon an nMOS transistor for frequency enhancement in CMOS ring oscillators is described. Emphasis is given to the performance analysis and design guidelines of the inductive loading technique as well as its theoretical comparison with the ordinary resistive loading ring oscillator. Implemented using a 0.35 μm, 3.3 V CMOS process, the simulated 3-stage nMOS inductive ring oscillator meet the specified target at 2.4 GHz even at slow process extreme and 125°C temperature while consuming less than 47.5 mW of power.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; 0.35 micron; 125 degC; 2.4 GHz; 3.3 V; 47.5 mW; CMOS ring oscillators; NMOS inductive loading technique; active inductive load; design guidelines; extended operating frequency ring oscillators; frequency enhancement; nMOS transistor; performance analysis; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Delay; Frequency; MOS devices; MOSFETs; Ring oscillators; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on

Print_ISBN

0-7803-7523-8

Type

conf

DOI

10.1109/MWSCAS.2002.1187170

Filename

1187170