Title :
BiCMOS device modeling for RF IC design
Author :
Hull, Christopher ; Kishore, S.V.
Author_Institution :
Silicon Wave, San Diego, CA, USA
Abstract :
A review of BiCMOS modeling from a RF designer´s point of view is presented, Pitfalls of standard models are shown in the context of modern device design. A few circuit examples are presented to illustrate the impact of device modeling on RF IC design
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; integrated circuit design; integrated circuit modelling; reviews; semiconductor device models; BiCMOS device modelling; RF IC design; RFICs; review; standard models; Admittance; BiCMOS integrated circuits; Capacitance; Circuit synthesis; Current density; Integrated circuit modeling; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Threshold voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803516
