Title :
Diffused resistor mismatch modeling and characterization
Author :
Drennan, Patrick G.
Author_Institution :
Motorola SPS, Tempe, AZ, USA
Abstract :
This paper presents a novel, physically based model and method for the characterization of diffused resistor mismatch. It is shown that the mismatch does not follow the 1/(√(LW)) dependence as reported in other publications. We also demonstrate that there is an optimum sheet resistance for resistor mismatch as determined by a trade-off between the ion implant dose concentration and the junction depth mismatch
Keywords :
ion implantation; resistors; semiconductor device measurement; semiconductor device models; diffused resistor mismatch characterization; diffused resistor mismatch modeling; ion implant dose concentration; junction depth mismatch; optimum sheet resistance; physically based model; Analog integrated circuits; Contact resistance; Dispersion; Geometry; Implants; Integrated circuit yield; Resistors; Semiconductor devices; Semiconductor optical amplifiers; Solid modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803518
