• DocumentCode
    3299560
  • Title

    A compact square-cell ESD structure for BiCMOS IC

  • Author

    Wang, A.Z. ; Tsay, C.H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    46
  • Lastpage
    49
  • Abstract
    Design of a compact square-cell, dual-direction ESD protection structure for BiCMOS ICs is reported. Detailed design features, such as, improved current uniformity, high-ESD protection level (>14 kV HBM), high-ESDV/Si ratio (~1.66 V/μm2), and adjustable trigger voltage are discussed
  • Keywords
    BiCMOS integrated circuits; electrostatic discharge; integrated circuit design; protection; 14 kV; BiCMOS IC; adjustable trigger voltage; compact square-cell ESD structure; current uniformity; design features; dual-direction ESD protection structure; high-ESD protection level; high-ESDV/Si ratio; BiCMOS integrated circuits; Electrostatic discharge; Equivalent circuits; Impedance; Partial discharges; Plugs; Semiconductor diodes; Surge protection; Switches; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-5714-0
  • Print_ISBN
    0-7803-5712-4
  • Type

    conf

  • DOI
    10.1109/BIPOL.1999.803522
  • Filename
    803522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299560