Title :
Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage
Author :
Rickelt, M. ; Rein, H.M.
Author_Institution :
AG Halbleiterbauelemente, Ruhr-Univ., Bochum, Germany
Abstract :
Analytical relations for the onset of impact-ionization induced instabilities in bipolar transistors are derived and verified by both 3D simulations and measurements. They allow the designer to calculate the maximum usable DC output voltage for different driving conditions
Keywords :
impact ionisation; power bipolar transistors; semiconductor device breakdown; semiconductor device models; stability; 3D simulations; DC output voltage; driving conditions; high-speed bipolar transistors; impact-ionization induced instabilities; maximum usable output voltage; Analytical models; Bipolar transistors; Doped fiber amplifiers; High power amplifiers; Impact ionization; Impedance; Low voltage; Optical fiber amplifiers; Semiconductor optical amplifiers; Silicon carbide;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803524
