DocumentCode :
3299611
Title :
Impact ionization and neutral base recombination in SiGe HBTs
Author :
Peter, M.S. ; Slotboom, J.W. ; Terpstra, D.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
1999
fDate :
1999
Firstpage :
58
Lastpage :
61
Abstract :
Both neutral base recombination and impact ionization tend to reduce the base current with increasing VCB. Contrary to other publications, no experimental evidence for neutral base recombination is found in our SiGe HBTs. In particular, temperature measurements of the CB diode of the SiGe HBTs did not show any difference compared to the Si control transistors
Keywords :
Ge-Si alloys; electron-hole recombination; heterojunction bipolar transistors; impact ionisation; semiconductor device breakdown; semiconductor device measurement; semiconductor materials; CB diode; SiGe; SiGe HBTs; base current; impact ionization; neutral base recombination; temperature measurements; Charge carrier lifetime; Current measurement; Diodes; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Silicon germanium; Temperature control; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
ISSN :
1088-5714-0
Print_ISBN :
0-7803-5712-4
Type :
conf
DOI :
10.1109/BIPOL.1999.803525
Filename :
803525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3299611
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