• DocumentCode
    3299611
  • Title

    Impact ionization and neutral base recombination in SiGe HBTs

  • Author

    Peter, M.S. ; Slotboom, J.W. ; Terpstra, D.

  • Author_Institution
    Philips Res. Lab., Eindhoven, Netherlands
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    58
  • Lastpage
    61
  • Abstract
    Both neutral base recombination and impact ionization tend to reduce the base current with increasing VCB. Contrary to other publications, no experimental evidence for neutral base recombination is found in our SiGe HBTs. In particular, temperature measurements of the CB diode of the SiGe HBTs did not show any difference compared to the Si control transistors
  • Keywords
    Ge-Si alloys; electron-hole recombination; heterojunction bipolar transistors; impact ionisation; semiconductor device breakdown; semiconductor device measurement; semiconductor materials; CB diode; SiGe; SiGe HBTs; base current; impact ionization; neutral base recombination; temperature measurements; Charge carrier lifetime; Current measurement; Diodes; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Silicon germanium; Temperature control; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-5714-0
  • Print_ISBN
    0-7803-5712-4
  • Type

    conf

  • DOI
    10.1109/BIPOL.1999.803525
  • Filename
    803525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299611