• DocumentCode
    3299637
  • Title

    Optical modulation and detection based on a PN junction embedded silicon waveguide

  • Author

    Hui Yu ; Jianyi Yang ; Xiaoqing Jiang

  • Author_Institution
    Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    2013
  • fDate
    26-28 July 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A carrier-depletion-based silicon MZ modulator is used for high-speed optical detection by leveraging the defect mediated absorption. As a modulator, the device exhibits a modulation efficiency of VπLπ=1.2 V.cm while as a detector, the responsivity is 22 mA/W at a reverse bias of-7.1 V. An operation speed of 35 Gb/s is obtained for both optical modulation and detection.
  • Keywords
    elemental semiconductors; optical communication; optical modulation; optical waveguides; p-n junctions; silicon; PN junction embedded silicon waveguide; bit rate 35 Gbit/s; carrier-depletion-based silicon MZ modulator; high-speed optical detection; optical modulation; reverse bias; Optical amplifiers; Optical modulation; Optical waveguides; Photoconductivity; Photonics; Silicon; detector; modulator; silicon photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications and Networks (ICOCN), 2013 12th International Conference on
  • Conference_Location
    Chengdu
  • Type

    conf

  • DOI
    10.1109/ICOCN.2013.6617206
  • Filename
    6617206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299637