A Si/SiGe HBT sub-harmonic mixer/downconverter

Author

Sheng, L. ; Jensen, J. ; Larson, L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

1999

fDate

1999

Firstpage

71

Lastpage

74

Abstract

A wideband sub-harmonic mixer/direct conversion downconverter is implemented in Si/SiGe HBT technology, with improved rejection of the local oscillator, high input intercept and low current requirements. The circuit utilizes a combination of phase shifters operating at forty five degrees and ninety degrees to achieve better than 33 dB rejection of the local oscillator; each mixer has an input intercept point in excess of 2 dBm (extrapolated) and dc current of 2.4 mA from a 3.3 V supply

Keywords

Ge-Si alloys; MMIC frequency convertors; MMIC mixers; UHF frequency convertors; UHF integrated circuits; UHF mixers; UHF phase shifters; bipolar MMIC; elemental semiconductors; semiconductor materials; silicon; 2.4 mA; 3.3 V; HBT technology; Si-SiGe; dc current; input intercept; input intercept point; local oscillator; low current requirements; phase shifters; rejection; wideband sub-harmonic mixer/direct conversion downconverter; Circuits; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Mixers; RF signals; Radio frequency; Signal design; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803529

Filename

803529