Title :
Physical analysis of current snap-back phenomenon in buffered high power rectifiers
Author :
Trivedi, Malay ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper provides a physical explanation of the snap-back observed in the forward I-V characteristics of high power rectifiers having a buffer layer at the rectifying junction, as found in punch-through IGBTs. Current density at which the snap-back occurs and the extent of the fall in voltage are shown to be strongly dependent on the doping, width and carrier lifetime of the buffer layer
Keywords :
carrier lifetime; current density; insulated gate bipolar transistors; power transistors; solid-state rectifiers; buffered high power rectifiers; carrier lifetime; current density; current snap-back phenomenon; forward I-V characteristics; punch-through IGBTs; Anodes; Buffer layers; Charge carrier lifetime; Current density; Doping; Equations; Insulated gate bipolar transistors; Rectifiers; Semiconductor diodes; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803531
