Title :
Novel high voltage SOI structures
Author :
Huang, A.Q. ; Li, X. ; Sun, N.X.
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper proposes several new device structures suitable for realizing high voltage power devices in thin SOI layer. Both analytical and simulation results show that the on-resistance of a unipolar device based on these structures is significantly reduced and the figure-of-merit, Ron/VB, can be an order of magnitude smaller than the theoretical limitation of vertical power devices
Keywords :
CMOS integrated circuits; power integrated circuits; silicon-on-insulator; CMOS ICs; Si; figure-of-merit; high voltage SOI structures; high-voltage ICs; on-resistance; unipolar device; vertical power devices; Analytical models; Boundary conditions; Circuits; Doping; Parasitic capacitance; Power electronics; Silicon on insulator technology; Sun; Thyristors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803532
