Title :
Improved extraction of base and emitter resistance from small signal high frequency admittance measurements
Author :
Kloosterman, W.J. ; Paasschens, J.C.J. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The base- and emitter resistance are important parameters of bipolar transistors and can be extracted from high frequency small signal admittance (Y) parameters. The circle impedance method and the two port method are examined and improvements are presented
Keywords :
bipolar transistors; electric admittance measurement; electric resistance measurement; equivalent circuits; semiconductor device measurement; semiconductor device models; Y-parameters; base resistance extraction; bipolar transistors; circle impedance method; emitter resistance extraction; high frequency admittance measurements; small signal HF admittance measurements; two port method; Admittance measurement; Bipolar transistors; Capacitance; Degradation; Electrical resistance measurement; Equivalent circuits; Frequency; Impedance measurement; Laboratories; Noise measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803534
