Hydrostatic stress in Cu damascene interconnects

Hydrostatic stress of Cu damascene interconnects were calculated by using commercial finite element software in the present work. The analytical work was performed to examine the distribution of hydrostatic stress and the effect of different low-k dielectrics and barrier materials in the Cu interconnects. The results indicate that the hydrostatic stress is strongly dependent upon different low-k dielectrics and barrier materials in Cu interconnects, and the stress is highly non-uniform throughout the Cu structure and the highest tensile hydrostatic stress exists on the top interface.