DocumentCode
3299850
Title
A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz ft HBT and 0.18 μm Lett CMOS
Author
St.Onge, S.A. ; Harame, D.L. ; Dunn, J.S. ; Subbanna, S. ; Ahlgren, D.C. ; Freeman, G. ; Jagannathan, B. ; Jeng, S.J. ; Schonenberg, K. ; Stein, K. ; Groves, R. ; Coolbaugh, D. ; Feilchenfeld, N. ; Geiss, P. ; Gordon, M. ; Gray, P. ; Hershberger, D. ; Kil
Author_Institution
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
fYear
1999
fDate
1999
Firstpage
117
Lastpage
120
Abstract
A new base-after-gate integration scheme has been developed to integrate a 47 GHz ft, 65 GHz FmaxSiGe HBT process with a 0.24 μm CMOS technology having 0.18 μm Leff and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 μm SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications
Keywords
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; semiconductor materials; 0.18 micron; 0.24 micron; 47 GHz; 65 GHz; 7 nm; BiCMOS 6HP; HBT; SiGe; SiGe BiCMOS production technology; base-after-gate integration scheme; dual gate oxide option; mixed-signal RF production technology; passive components suite; BiCMOS integrated circuits; CMOS process; CMOS technology; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Production; Radio frequency; Silicon germanium; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location
Minneapolis, MN
ISSN
1088-5714-0
Print_ISBN
0-7803-5712-4
Type
conf
DOI
10.1109/BIPOL.1999.803539
Filename
803539
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