Title :
A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz ft HBT and 0.18 μm Lett CMOS
Author :
St.Onge, S.A. ; Harame, D.L. ; Dunn, J.S. ; Subbanna, S. ; Ahlgren, D.C. ; Freeman, G. ; Jagannathan, B. ; Jeng, S.J. ; Schonenberg, K. ; Stein, K. ; Groves, R. ; Coolbaugh, D. ; Feilchenfeld, N. ; Geiss, P. ; Gordon, M. ; Gray, P. ; Hershberger, D. ; Kil
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
A new base-after-gate integration scheme has been developed to integrate a 47 GHz ft, 65 GHz FmaxSiGe HBT process with a 0.24 μm CMOS technology having 0.18 μm Leff and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 μm SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; semiconductor materials; 0.18 micron; 0.24 micron; 47 GHz; 65 GHz; 7 nm; BiCMOS 6HP; HBT; SiGe; SiGe BiCMOS production technology; base-after-gate integration scheme; dual gate oxide option; mixed-signal RF production technology; passive components suite; BiCMOS integrated circuits; CMOS process; CMOS technology; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Production; Radio frequency; Silicon germanium; Space technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803539
