BC35: a 0.35 μm, 30 GHz production RF BiCMOS technology

Author

Racanelli, Marco ; Zhang, Zhe ; Zheng, Jie ; Kar-Roy, Arjun ; Joshi, Pankaj ; Kalburge, Amol ; Nathawad, Lalit ; Todd, Michael ; Ukah, Clement ; Hu, Chun ; Compton, Cory ; Schuegraf, Klaus ; Ye, Peihua ; Dowlatshahi, Reza ; Jolly, Gurvinder ; Kempf, Paul

Author_Institution

Conexant Syst., Newport Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

125

Lastpage

128

Abstract

BC35, a 0.35 μm RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 μm CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also described including the addition of a SiGe epi base to increase peak Ft to 53 GHz and the reduction of emitter width to achieve a 2 GHz NFmin of 0.69 dB

Keywords

BiCMOS integrated circuits; MMIC; UHF integrated circuits; integrated circuit technology; 0.35 micron; 0.69 dB; 2 to 74 GHz; 200 mm; 3.8 V; 6.2 V; BC35 process; NPN devices; RF passive elements; SiGe epi base; emitter width reduction; production RF BiCMOS technology; production process enhancements; BiCMOS integrated circuits; CMOS process; Capacitance; Implants; MIM capacitors; Pattern matching; Production; Radio frequency; Surface topography; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803541

Filename

803541