DocumentCode :
3299928
Title :
High performance MIM capacitor for RF BiCMOS/CMOS LSIs
Author :
Yoshitomi, Takashi ; Ebuchi, Yasuo ; Kimijama, H. ; Ohguro, Tatsuya ; Morifuji, Eiji ; Momose, Hisayo Sasaki ; Kasai, Kunihiro ; Ishimaru, Kazunari ; Matsuoka, Furnitorno ; Katsumata, Yasuhiro ; Kinugawa, Masaaki ; Iwai, Hiroshi
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear :
1999
fDate :
1999
Firstpage :
133
Lastpage :
136
Abstract :
Using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta2O5 films were investigated. Amorphous Ta2O5 with the proposed structure is one of the suitable combinations for the capacitors for RF analog applications
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; MIM devices; UHF integrated circuits; dielectric thin films; large scale integration; RF BiCMOS/CMOS LSIs; RF analog applications; Ta2O5; multi-via MIM capacitor; Annealing; BiCMOS integrated circuits; CMOS process; Dielectric films; Electrodes; Fluid flow; Large scale integration; MIM capacitors; Radio frequency; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
ISSN :
1088-5714-0
Print_ISBN :
0-7803-5712-4
Type :
conf
DOI :
10.1109/BIPOL.1999.803543
Filename :
803543
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3299928
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