Ultra-low-temperature low-ohmic contacts for SOA applications

Author

Nanver, L.K. ; van Zeijl, H.W. ; Schellevis, H. ; Mallee, R.J.M. ; Slabbekoorn, J. ; Dekker, R. ; Slotboom, J.W.

Author_Institution

Lab. of ECTM, Delft Univ. of Technol., Netherlands

fYear

1999

fDate

1999

Firstpage

137

Lastpage

140

Abstract

High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300°C. This is the maximum allowable temperature after gluing to glass in silicon-on-anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing

Keywords

UHF bipolar transistors; laser beam annealing; microwave bipolar transistors; ohmic contacts; 0 to 300 degC; SOA applications; Si; back-wafer; bipolar NPN transistors; front-wafer; high-power excimer laser annealing; low-ohmic implanted contacts; silicon-on-anything processing; thermal processing temperatures; ultra-low-temperature low-ohmic contacts; Annealing; Etching; Fabrication; Glass; Integrated circuit technology; Laboratories; Semiconductor optical amplifiers; Silicon; Temperature; Windows;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803544

Filename

803544