Oxide traps in MOS transistors: Semi-automatic extraction of trap parameters from time dependent defect spectroscopy

An algorithm to extract the statistical properties of oxide traps in ultra-small metal oxide silicon field effect transistors (MOSFETs) is presented. The algorithm uses data from time dependent defect spectroscopy (TDDS) measurements. It works reliable in a great range of circumstances, and automatically detects and correctly processes variations in the measurement data due to channel percolation path modulations. The algorithm is designed to require minimal user interaction, making parameter extraction from a large base of experimental data feasible.