To develop porous Si as substrate for better quality GaN layer

In this work, we prepare porous Si substrates via anodic etching process. The etching parameters such as time and current would be optimized for the best porous substrate, which is defined by having high porous density. The estimated average of porous density of the substrate is determined through the observation via scanning electron microscopy (SEM). After that, a thin GaN film is deposited onto the best porous Si substrate, using RF-sputtering machine. The grown layer is then will be characterized by photoluminescence (PL), X-ray diffraction (XRD) and Hall-effect measurements. As a comparison, we also grow and characterize a thin GaN on non-porous Si substrate, with the adoption of AlN buffer layer.