Title :
A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMOS
Author :
Ainspan, Herschel ; Soyuer, Mehmet
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper presents a 20-channel, 4.850-5.325 GHz PLL-based frequency synthesizer implemented in a production SiGe BiCMOS technology. The circuit is fully integrated, including the loop filter capacitor and VCO. A fast settling time of 10 μs is measured with a reference frequency of 12.5 MHz. Wafer-level tests indicate a phase noise below -100 dBc/Hz at a 1 MHz offset. The chip dissipates 255 mW from a 3.3 V supply and occupies an active area of 2 mm2
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; frequency synthesizers; integrated circuit noise; mixed analogue-digital integrated circuits; phase locked loops; phase noise; programmable circuits; semiconductor materials; 10 mus; 12.5 MHz; 20-channel configuration; 255 mW; 3.3 V; 4.85 to 5.325 GHz; 5 GHz; PLL-based frequency synthesizer; SiGe; SiGe BiCMOS; VCO; fully-integrated frequency synthesizer; loop filter capacitor; phase noise; production BiCMOS technology; BiCMOS integrated circuits; Capacitors; Filters; Frequency measurement; Frequency synthesizers; Germanium silicon alloys; Integrated circuit technology; Production; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803551
