A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMOS

Author

Ainspan, Herschel ; Soyuer, Mehmet

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1999

fDate

1999

Firstpage

165

Lastpage

168

Abstract

This paper presents a 20-channel, 4.850-5.325 GHz PLL-based frequency synthesizer implemented in a production SiGe BiCMOS technology. The circuit is fully integrated, including the loop filter capacitor and VCO. A fast settling time of 10 μs is measured with a reference frequency of 12.5 MHz. Wafer-level tests indicate a phase noise below -100 dBc/Hz at a 1 MHz offset. The chip dissipates 255 mW from a 3.3 V supply and occupies an active area of 2 mm²

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; frequency synthesizers; integrated circuit noise; mixed analogue-digital integrated circuits; phase locked loops; phase noise; programmable circuits; semiconductor materials; 10 mus; 12.5 MHz; 20-channel configuration; 255 mW; 3.3 V; 4.85 to 5.325 GHz; 5 GHz; PLL-based frequency synthesizer; SiGe; SiGe BiCMOS; VCO; fully-integrated frequency synthesizer; loop filter capacitor; phase noise; production BiCMOS technology; BiCMOS integrated circuits; Capacitors; Filters; Frequency measurement; Frequency synthesizers; Germanium silicon alloys; Integrated circuit technology; Production; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803551

Filename

803551