Title :
Ultra-low-k porous SiCOH dielectric degradation process before breakdown
Author :
Breuer, T. ; Kerst, U. ; Boit, C. ; Langer, E. ; Ruelke, H.
Author_Institution :
Semicond. Devices Div., Tech. Univ. Berlin, Berlin, Germany
Abstract :
The degradation of Ultra Low K (ULK) SiCOH dielectrics before breakdown is investigated. For the first time very early stages of degradation before breakdown have been revealed and a model of the basic process of ULK alteration process under electrical stress is proposed. Two different degradation patterns were found. Tip electrode test structures have been specifically designed for this investigation in order to determine the location of degradation and breakdown. A stepwise increased voltage stress test with a meticulously observed current in the fA range was developed and successfully applied.
Keywords :
dielectric materials; electric breakdown; permittivity; porous materials; silicon compounds; SiCOH; ULK alteration process; breakdown location; degradation location; degradation patterns; degradation process; meticulously observed current; stepwise increased voltage stress test; tip electrode test structures; ultra-low-k porous SiCOH dielectrics; Breakdown voltage; Degradation; Dielectric breakdown; Dielectric constant; Dielectric materials; Electric breakdown; Glass; Integrated circuit interconnections; Stress; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532240
